Static random-access memory (SRAM) bit cell with channel depopulation

ABSTRACT

Embodiments disclosed herein include transistor devices with depopulated channels. In an embodiment, the transistor device comprises a source region, a drain region, and a vertical stack of semiconductor channels between the source region and the drain region. In an embodiment, the vertical stack of semiconductor channels comprises first semiconductor channels, and a second semiconductor channel over the first semiconductor channels. In an embodiment, first concentrations of a dopant in the first semiconductor channels are less than a second concentration of the dopant in the second semiconductor channel.

TECHNICAL FIELD

Embodiments of the present disclosure relate to semiconductor devices,and more particularly to nanoribbon and nanowire transistors withdepopulated channels for use in integrated circuitry, such as staticrandom-access memory (SRAM).

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory or logic devices on achip, lending to the fabrication of products with increased capacity.The drive for ever-more capacity, however, is not without issue. Thenecessity to optimize the performance of each device becomesincreasingly significant.

In the manufacture of integrated circuit devices, multi-gatetransistors, such as tri-gate transistors, have become more prevalent asdevice dimensions continue to scale down. In conventional processes,tri-gate transistors are generally fabricated on either bulk siliconsubstrates or silicon-on-insulator substrates. In some instances, bulksilicon substrates are preferred due to their lower cost and becausethey enable a less complicated tri-gate fabrication process. In anotheraspect, maintaining mobility improvement and short channel control asmicroelectronic device dimensions scale below the 10 nanometer (nm) nodeprovides a challenge in device fabrication. Nanowires used to fabricatedevices provide improved short channel control.

Scaling multi-gate and nanowire transistors has not been withoutconsequence, however. As the dimensions of these fundamental buildingblocks of microelectronic circuitry are reduced and as the sheer numberof fundamental building blocks fabricated in a given region isincreased, the constraints on the lithographic processes used to patternthese building blocks have become overwhelming. In particular, there maybe a trade-off between the smallest dimension of a feature patterned ina semiconductor stack (the critical dimension) and the spacing betweensuch features.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional illustration of a transistor with aplurality of stacked semiconductor channels, in accordance with anembodiment.

FIG. 1B is a cross-sectional illustration of the transistor in FIG. 1A,along line 1-1′, in accordance with an embodiment.

FIG. 1C is a cross-sectional illustration of a transistor with adepopulated channel, in accordance with an embodiment.

FIG. 1D is a cross-sectional illustration of a transistor with twodepopulated channels, in accordance with an embodiment.

FIG. 2A is a cross-sectional illustration of transistor aftersource/drain regions are formed, in accordance with an embodiment.

FIG. 2B is a cross-sectional illustration of the transistor in FIG. 2Aalong line 2-2′, in accordance with an embodiment.

FIG. 2C is a cross-sectional illustration of the transistor after asacrificial gate is removed, in accordance with an embodiment.

FIG. 2D is a cross-sectional illustration of the transistor after apre-amorphization process is implemented on the top channel, inaccordance with an embodiment.

FIG. 2E is a cross-sectional illustration of the transistor after adopant is selectively implanted into the top channel, in accordance withan embodiment.

FIG. 2F is a cross-sectional illustration of the transistor after thesacrificial layers between the channels are removed, in accordance withan embodiment.

FIG. 2G is a cross-sectional illustration of the transistor after a gatedielectric is disposed around the channels, in accordance with anembodiment.

FIG. 2H is a cross-sectional illustration of the transistor after a gateelectrode is disposed around the gate dielectric, in accordance with anembodiment.

FIG. 3A is a graph of dopant concentration through the stack of channelswith and without a pre-amorphization process, in accordance with anembodiment.

FIG. 3B is a graph that depicts the dopant concentration in variouschannel layers after an annealing process, in accordance with anembodiment.

FIGS. 4A-4C are cross-sectional illustrations of an integrated circuitdevice that includes a first transistor and a second transistor, wherethe number of active channels is different between the two transistors,in accordance with various embodiments.

FIG. 5A is a cross-sectional illustration of a transistor with adepopulated region below a stack of channels, in accordance with anembodiment.

FIG. 5B is a cross-sectional illustration of a transistor with a pair ofdepopulated region below a stack of channels, in accordance with anembodiment.

FIGS. 6A-6D are cross-sectional illustrations of a process for forming adepopulated region in a stack of channels, in accordance with anembodiment.

FIG. 7A-7E are cross-sectional illustrations of integrated circuitdevices that include a first transistor and a second transistor, wherethe number of active channels is different between the two transistors,in accordance with various embodiments.

FIG. 8 is a plan view layout of a six-transistor (6-T) SRAM cell thatincludes a non-uniform number of active channels for the transistors, inaccordance with an embodiment.

FIGS. 9A and 9B are cross-sectional illustrations of the 6-T SRAM cellthat includes channels that are depopulated by doping processes, inaccordance with an embodiment.

FIGS. 10A and 10B are cross-sectional illustrations of the 6-T SRAM cellthat includes channels that are depopulated by etching processes, inaccordance with an embodiment.

FIG. 11 illustrates a computing device in accordance with oneimplementation of an embodiment of the disclosure.

FIG. 12 is an interposer implementing one or more embodiments of thedisclosure.

EMBODIMENTS OF THE PRESENT DISCLOSURE

Described herein are nanoribbon and nanowire transistors withdepopulated channels for use in integrated circuitry, such as staticrandom-access memory (SRAM), in accordance with various embodiments. Inthe following description, various aspects of the illustrativeimplementations will be described using terms commonly employed by thoseskilled in the art to convey the substance of their work to othersskilled in the art. However, it will be apparent to those skilled in theart that the present invention may be practiced with only some of thedescribed aspects. For purposes of explanation, specific numbers,materials and configurations are set forth in order to provide athorough understanding of the illustrative implementations. However, itwill be apparent to one skilled in the art that the present inventionmay be practiced without the specific details. In other instances,well-known features are omitted or simplified in order not to obscurethe illustrative implementations.

Various operations will be described as multiple discrete operations, inturn, in a manner that is most helpful in understanding the presentinvention, however, the order of description should not be construed toimply that these operations are necessarily order dependent. Inparticular, these operations need not be performed in the order ofpresentation.

One or more embodiments described herein are directed depopulation ofone or more channels in a nanowire or nanoribbon transistor. One or moreembodiments described herein provide bottom-up channel depopulation, andone or more embodiments described herein provide top-down channeldepopulation. One or more embodiments described herein utilizedepopulated channels in integrated circuit devices, such as SRAM cells.

To provide context, transistors with different drive currents may beneeded for different circuit types. Embodiments disclosed herein aredirected to achieving different drive currents by depopulating thenumber of nanowire transistor channels in device structures. One or moreembodiments provide an approach for deleting discrete numbers of wiresfrom a transistor structure. One or more embodiments provide an approachfor rendering a discrete number of wires from a transistor structure asnon-conducting. Approaches may be suitable for both ribbons and wires(RAW). As such, references to a nanowire herein may be construed asincluding a nanowire or a nanoribbon.

In accordance with an embodiment of the present disclosure, describedherein is a process flow for achieving top-down nanowire transistorchannel depopulation. Embodiments may include channel depopulation ofnanowire transistors to provide for modulation of drive currents indifferent devices, which may be needed for different circuits.

In accordance with an embodiment of the present disclosure, nanowireprocessing of an alternating Si/SiGe stack includes patterning the stackinto fins. Generic dummy gates (which may or may not be poly dummygates) are patterned and etched. Source/drain regions may be formed onopposite ends of the dummy gates. The dummy gate is then removed toexpose the remaining portions of the alternating Si/SiGe stack (i.e.,the channel region). A pre-amorphization implantation may beimplemented. Following the pre-amorphization, a depopulation dopant isimplanted into the top Si layer. The pre-amorphization implantationdisrupts the crystal structure of top Si layer and minimizes tunnelingof subsequent dopants to lower Si layers. In this way, the top Si layeris rendered non-conducting without negatively impacting the underlyingSi layers.

In accordance with an embodiment of the present disclosure, describedherein is a process flow for achieving bottom-up nanowire transistorchannel depopulation. Embodiments may include channel depopulation ofnanowire transistors to provide for modulation of drive currents indifferent devices, which may be needed for different circuits.

In accordance with an embodiment of the present disclosure, nanowireprocessing of an alternating Si/SiGe stack includes patterning the stackinto fins. Generic dummy gates (which may or may not be poly dummygates) are patterned and etched. A hardmask or other blocking layer isdeposited and recessed to below a top of a last SiGe layer on thebottom. A hard mask selective to the blocking layer is conformallydeposited and slimmed to protect the top Si/SiGe layers. The blockinglayer is removed and a dummy gate oxide is broken-through, exposing thebottom SiGe layer. The SiGe bottom layer is then etched away from thebottom-up and stops on the bottom Si nanowire and substrate below. Thebottom Si nanowire is then etched away and stops on the next SiGe layer(and some substrate may also be etched). The sequence can then berepeated, e.g., etch SiGe, then etch Si. In this way, Si nanowires areetched away sequentially from the bottom-up.

Although the preceding processes describe using Si and SiGe layers,other pairs of semiconductor materials which can be alloyed and grownepitaxially could be implemented to achieve various embodiments herein,for example, InAs and InGaAs, or SiGe and Ge.

In accordance with an embodiment of the present disclosure, nanowiretransistors with channel depopulation may be utilized in SRAM cells. Theability to fine tune the drive strength of individual transistors allowsfor a better balance between read stability and write-ability withoutthe need for assist circuitry. For example, the pull-up (PU) transistorsmay be implemented with depopulated channels, whereas the pull-down (PD)and pass-gate (PG) transistors may be implemented without depopulatedchannels. As a result, the drive strength of the PU transistors iseffectively reduced compared to that of the PG and PD transistors. Byeliminating the need for assist circuits, chip area is saved and powerconsumption is reduced. While the particular example of a six-transistor(6-T) SRAM is provided, it is to be appreciated that various circuitarchitectures may also benefit from the depopulation of one or morechannels of a transistor in the circuit in order to provide modulateddrive currents across the circuit.

Referring now to FIG. 1A, a cross-sectional illustration of a nanowiretransistor 100 is shown, in accordance with an embodiment. The nanowiretransistor 100 comprises a substrate 101. The substrate 101 may be aninsulating material or may comprise an insulating material and asemiconductor material. For example, the semiconductor material mayinclude remnant portions of a semiconductor fin, from which thetransistor 100 is fabricated. In an embodiment, an underlyingsemiconductor substrate (not shown) that is below the substrate 101represents a general workpiece object used to manufacture integratedcircuits. The semiconductor substrate often includes a wafer or otherpiece of silicon or another semiconductor material. Suitablesemiconductor substrates include, but are not limited to, single crystalsilicon, polycrystalline silicon and silicon on insulator (SOI), as wellas similar substrates formed of other semiconductor materials, such assubstrates including germanium, carbon, or group III-V materials.

In an embodiment, the transistor 100 may comprise source/drain regions105 that are on opposite ends of a stack of nanowire channels 115. Thesource/drain regions 105 are formed by conventional processes. Forexample, recesses are formed adjacent to the gate electrode 110. Theserecesses may then be filled with a silicon alloy using a selectiveepitaxial deposition process. In some implementations, the silicon alloymay be in-situ doped silicon germanium, in-situ doped silicon carbide,or in-situ doped silicon. In alternate implementations, other siliconalloys may be used. For instance, alternate silicon alloy materials thatmay be used include, but are not limited to, nickel silicide, titaniumsilicide, cobalt silicide, and possibly may be doped with one or more ofboron and/or aluminum.

In an embodiment, spacers 111 may separate the gate electrode 110 fromthe source/drain regions 105. The nanowire channels 115 may pass throughthe spacers 111 to connect to the source/drain regions 105 on eitherside of the nanowire channels 115. In an embodiment, a gate dielectric117 surrounds the perimeter of the nanowire channels 115 to providegate-all-around (GAA) control of the transistor 100. The gate dielectric117 may be, for example, any suitable oxide such as silicon dioxide orhigh-k gate dielectric materials. Examples of high-k gate dielectricmaterials include, for instance, hafnium oxide, hafnium silicon oxide,lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconiumsilicon oxide, tantalum oxide, titanium oxide, barium strontium titaniumoxide, barium titanium oxide, strontium titanium oxide, yttrium oxide,aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. Insome embodiments, an annealing process may be carried out on the gatedielectric layer 117 to improve its quality when a high-k material isused.

In an embodiment, the gate electrode 110 surrounds the gate dielectriclayer 117 within the spacers 111. In the illustrated embodiment, thegate electrode 110 is shown as a single monolithic layer. However, it isto be appreciated that the gate electrode 110 may comprise aworkfunction metal over the gate dielectric layer 117 and a gate fillmetal. When the workfunction metal will serve as an N-type workfunctionmetal, the workfunction metal of the gate electrode 110 preferably has aworkfunction that is between about 3.9 eV and about 4.2 eV. N-typematerials that may be used to form the metal of the gate electrode 110include, but are not limited to, hafnium, zirconium, titanium, tantalum,aluminum, and metal carbides that include these elements, i.e., titaniumcarbide, zirconium carbide, tantalum carbide, hafnium carbide andaluminum carbide. When the workfunction metal will serve as a P-typeworkfunction metal, workfunction metal of the gate electrode 110preferable has a workfunction that is between about 4.9 eV and about 5.2eV. P-type materials that may be used to form the metal of the gateelectrode 110 include, but are not limited to, ruthenium, palladium,platinum, cobalt, nickel, and conductive metal oxides, e.g., rutheniumoxide.

In the illustrated embodiment, the transistor 100 is shown as havingfour nanowire channels 115. However, it is to be appreciated thattransistors 100 may include any number of nanowire channels 115 inaccordance with various embodiments. Furthermore, FIG. 1A illustratesthat all of the nanowire channels 115 are functional channels. That is,each of the nanowire channels 115 is capable of conducting electricity,in order to provide a given drive current for the transistor 100.

Referring now to FIG. 1B, a cross-sectional illustration of thetransistor 100 in FIG. 1A along line 1-1′ is shown, in accordance withan embodiment. As shown, all four nanowire channels 115 are illustratedwith the same shading to indicate that they are all functioningchannels. As will be described below, one or more of the nanowirechannels 115 may be depopulated in order to modulate the drive currentof the transistor 100.

Referring now to FIG. 1C, a cross-sectional illustration of a transistor100 with a modulated drive current is shown, in accordance with anembodiment. As shown, the transistor 100 comprises first nanowirechannels 115 _(A) and a second nanowire channel 115 _(B). In anembodiment, the second nanowire channel 115 _(B) is a depopulatedchannel. That is, the second nanowire channel 115 _(B) may not becapable of conducting current under normal operating conditions of thetransistor 100. As such, the drive current of the transistor 100 isreduced compared to the drive current of the transistor 100 shown inFIG. 1A and FIG. 1B. The transistor 100 in FIG. 1C is an example of atop-down channel depopulation. That is, the depopulated second nanowirechannel 115 _(B) is positioned above the first nanowire channels 115_(A), relative to the substrate 101.

In an embodiment, the depopulated second nanowire channel 115 _(B) isrendered inactive due to a high concentration of a depopulation dopant.The conductivity type (e.g., N-type or P-type) of the depopulationdopant needed to prevent current from passing across the second nanowirechannel 115 _(B) is the opposite conductivity type of the transistor100. For example, when the transistor is an N-type transistor, thedepopulation dopant in the second nanowire channel 115 _(B) is a P-typedopant (e.g., in the case of a silicon nanowire channel 115 _(B), thedepopulation dopant may be boron, gallium, etc.), and when thetransistor is a P-type transistor, the depopulation dopant in the secondnanowire channel 115 _(B) is an N-type dopant (e.g., in the case of asilicon nanowire channel 115 _(B), the depopulation dopant may bephosphorous, arsenic, etc.).

In an embodiment, a concentration of the depopulation dopant that blocksconductivity across the second nanowire channel 115 _(B) may beapproximately 1e19 cm⁻³ or greater, or approximately 1e20 cm⁻³ orgreater. In an embodiment, the concentration of the depopulation dopantin the second nanowire channel 115 _(B) may be approximately two ordersof magnitude greater than the concentration of the depopulation dopantin the first nanowire channels 115 _(A), or the concentration of thedepopulation dopant in the second nanowire channel 115 _(B) may beapproximately three orders of magnitude greater than the concentrationof the depopulation dopant in the first nanowire channels 115 _(A). Theconcentrations of the depopulation dopant in the first nanowire channels115 _(A) is low enough that the conductivities of the first nanowirechannels 115 _(A) are not significantly reduced.

As will be described in greater detail below, the ability to selectivelydope the second nanowire channel 115 _(B) over the first nanowirechannels 115 _(A) is provided, at least in part, by a pre-amorphizationimplant. A pre-amorphization implant includes implanting a species intothe second nanowire channel 115 _(B) that disrupts the crystal structureof the second nanowire channel 115 _(B). That is, in some embodiments, adegree of crystallinity of the second nanowire channel 115 _(B) may belower than a degree of crystallinity of the first nanowire channels 115_(A). Disrupting the crystal structure of the second nanowire channel115 _(B) limits subsequently implanted depopulation dopants fromtunneling into the underlying first nanowire channels 115 _(A). Thepre-amorphization species is an element that does not significantlyalter the conductivity of the second nanowire channel 115 _(B). That is,the pre-amorphization species is substantially non-electrically active.For example, in the case of a silicon nanowire channel, thepre-amorphization species may comprise germanium. Accordingly,embodiments disclosed herein may also exhibit a concentration of thepre-amorphization species in the second nanowire channel 115 _(B).

As shown, the second nanowire channel 115 _(B) may have a structure thatis similar to the structure of the first nanowire channels 115 _(A)(with the exception of the concentration of the depopulation dopant, thedegree of crystallinity, and the concentration of the pre-amorphizationspecies). For example, the second nanowire channels 115 _(B) may besurrounded by the gate dielectric 117. Additionally, the dimensions,(e.g., channel length, thickness and/or width) of the second nanowirechannel 115 _(B) may be substantially similar to the dimensions of thefirst nanowire channels 115 _(A). Furthermore, it is to be appreciatedthat the base material for the second nanowire channels 115 _(B) and thefirst nanowire channels 115 _(A) may be substantially the same. Forexample, both may comprise silicon as the base material.

Referring now to FIG. 1D, a cross-sectional illustration of a transistor100 with a modulated drive current is shown, in accordance with anadditional embodiment. The transistor 100 in FIG. 1D may besubstantially similar to the transistor 100 in FIG. 1C, with theexception that an additional second nanowire channel 115 _(B) isprovided. The two second nanowire channels 115 _(B) are fabricated in atop-down configuration. That is, the second nanowire channels 115 _(B)are positioned over the first nanowire channels 115 _(A), relative tothe substrate 101. While transistors 100 are shown with a singledepopulated second nanowire channel 115 _(B) and a pair of depopulatedsecond nanowire channels 115 _(B), it is to be appreciated that anynumber of nanowire channels 115 may be depopulated to provide a desireddrive current for the transistor 100.

Referring now to FIGS. 2A-2H, a series of cross-sectional illustrationsdepict a process for forming a transistor 200 with one or moredepopulated nanowire channels using a top-down depopulation approach isshown, in accordance with an embodiment.

Referring now to FIG. 2A, a cross-sectional illustration of a transistor200 is shown, in accordance with an embodiment. In the illustratedembodiment, source/drain regions 205 have been formed on opposite endsof a gate structure over a substrate 201. The gate structure maycomprise a dummy gate electrode 212 and spacers 211. The gate structuremay cover a stack of nanowire channels 215 and sacrificial layers 218.For example, the nanowire channels 215 may comprise silicon and thesacrificial layers 218 may comprise silicon germanium, though othersuitable material choices with etch selectivity between the nanowirechannels 215 and the sacrificial layers 218 may be used. In anembodiment, the nanowire channels 215 extend through the spacers 211 tocontact the source/drain regions 205. In an embodiment, the dummy gateelectrode 212 may comprise polysilicon.

Referring now to FIG. 2B, a cross-sectional illustration of thetransistor 200 in FIG. 2A along line 2-2′ is shown, in accordance withan embodiment. As shown, the dummy gate electrode 212 wraps around thesidewalls and top surface of the stack of nanowire channels 215 andsacrificial layers 218.

Referring now to FIG. 2C, a cross-sectional illustration of thetransistor 200 after the dummy gate electrode 212 is removed is shown,in accordance with an embodiment. In an embodiment, the dummy gateelectrode 212 may be removed with a suitable etching process.

Referring now to FIG. 2D, a cross-sectional illustration of thetransistor 200 during a pre-amorphization implantation process is shown,in accordance with an embodiment. As shown, pre-amorphization species221 are implanted into the stack. The implantation may be implementedwith no tilt. As such, the pre-amorphization species 221 will only enterthe stack through the topmost nanowire channel 215′. In an embodiment,the energy of the implantation process is chosen to isolate the majorityof the pre-amorphization species 221 into the topmost nanowire channel215′. For example, an implantation energy of the pre-amorphizationspecies may be between approximately 1 keV and approximately 2 keV. Inorder to represent a change in crystallinity of the topmost nanowirechannel 215′, the shading of the topmost nanowire channel 215′ isdifferent than the shading of the underlying nanowire channels 215. Inan embodiment, the pre-amorphization species 221 may comprise germaniumor silicon.

In the illustrated embodiment, the pre-amorphization implant is isolatedto the topmost nanowire channel 215′. However, it is to be appreciatedthat by increasing the energy of the pre-amorphization implant,additional nanowire channels 215 (from the top-down) may also be alteredin order to allow for more than one nanowire channel 215 to bedepopulated.

Referring now to FIG. 2E, a cross-sectional illustration of thetransistor 200 during a depopulation dopant implant is shown, inaccordance with an embodiment. As shown, depopulation dopants 222 areimplanted into the stack. The implantation may be implemented with notilt. As such, the depopulation dopants 222 will only enter the stackthrough the topmost nanowire channel 215 _(B). In an embodiment, thedepopulation dopant implant is implemented after the pre-amorphizationimplant without an annealing process between the two implants. As such,the disrupted crystal structure of the nanowire channel 215′ remains andlimits the ability of the depopulation dopants 222 from tunneling downto lower nanowire channels 215. That is, first nanowire channels 215_(A) have concentrations of the depopulation dopant 222 that are lowenough to not alter the conductivities of the first nanowire channels215 _(A), and the second nanowire channel 215 _(B) (i.e., the topmostnanowire channel) has a concentration of the depopulation dopant 222that is sufficient to prevent current from passing through the secondnanowire channel 215 _(B).

In an embodiment, a concentration of the depopulation dopant 222 of thesecond nanowire channel 215 _(B) may be approximately 1e19 cm⁻³ orgreater, or approximately 1e20 cm⁻³ or greater. In an embodiment, theconcentration of the depopulation dopant 222 in the second nanowirechannel 215 _(B) may be approximately two orders of magnitude greaterthan the concentration of the depopulation dopant 222 in the firstnanowire channels 215 _(A), or the concentration of the depopulationdopant 222 in the second nanowire channel 215 _(B) may be approximatelythree orders of magnitude greater than the concentration of thedepopulation dopant 222 in the first nanowire channels 215 _(A). In anembodiment, the depopulation dopant 222 may comprise an N-type dopant(e.g., in the case of a silicon nanowire channel 215, phosphorous,arsenic, etc.) or a P-type dopant (e.g., in the case of a siliconnanowire channel 215, boron, gallium, etc.).

In the illustrated embodiment, the depopulation dopants 222 aresubstantially isolated to the topmost second nanowire channel 215 _(B).However, it is to be appreciated that by increasing the energy of thedepopulation dopant implant (in conjunction with a more aggressivepre-amorphization implant), additional nanowire channels 215 (from thetop-down) may also be altered in order to allow for more than onenanowire channel 215 to be depopulated. In an embodiment, thedepopulation dopant implant may have an energy between approximately 1keV and approximately 2 keV.

Referring now to FIG. 2F, a cross-sectional illustration of thetransistor 200 after the sacrificial layers 218 are removed is shown, inaccordance with an additional embodiment. In an embodiment, thesacrificial layers 218 may be removed with a suitable etching processthat removes the sacrificial layers 218 selective the nanowire channels215. In an embodiment, where the sacrificial layers 218 are silicongermanium and the nanowire channels 215 are silicon, the silicongermanium layer is etched selectively with a wet etch that selectivelyremoves the silicon germanium while not etching the silicon layers. Etchchemistries such as carboxylic acid/nitric acid/HF chemistry, and citricacid/nitric acid/HF, for example, may be utilized to selectively etchthe silicon germanium.

Referring now to FIG. 2G, a cross-sectional illustration of thetransistor 200 after a gate dielectric 217 is disposed over the nanowirechannels 215 _(A) and 215 _(B) is shown, in accordance with anembodiment. In an embodiment, the gate dielectric 217 may be depositedwith a conformal deposition process (e.g., atomic layer deposition(ALD), or the like). The gate dielectric 217 may be any suitable gatedielectric material, such as those described above.

Referring now to FIG. 2H, a cross-sectional illustration of thetransistor 200 after a gate electrode 210 is disposed over the gatedielectric 217 is shown, in accordance with an embodiment. In anembodiment, the gate electrode 210 may comprise a workfunction metal anda fill metal. Suitable material(s) for the gate electrode 210 areprovided above. As shown, the depopulated second nanowire channel 215_(B) maintains a structure similar to the structure of the active firstnanowire channels 215 _(A). The second nanowire channel 215 _(B) isrendered non-conducting by the presence of the depopulation dopants 222.Additionally, the second nanowire channels 215 _(B) may be identified byhaving a degree of crystallinity that is lower than that of the firstnanowire channels 215 _(A).

Referring now to FIGS. 3A and 3B, graphs depicting the concentration ofa dopant (e.g., phosphorous) with respect to depth into the stack ofnanowire channels and sacrificial layers (from the top down) are shown,in accordance with various embodiments. While the dopant is listed asphosphorous in FIGS. 3A and 3B, it is to be appreciated that similartrends are exhibited with other dopant species.

FIG. 3A illustrates the effect of the pre-amorphization implant on thedopant concentration. The first line 331 illustrates the concentrationof the dopant when there is no pre-amorphization implant, and the secondline 332 illustrates the concentration of the dopant when there is apre-amorphization implant. Both lines are the result after a dopantimplantation with substantially the same energy. Within the firstnanowire channel (Si₁) the concentration of the dopant is substantiallysimilar for both lines 331 and 332. However, at the second nanowirechannel (Si₂) the dopant concentration of the second line 332 isapproximately an order of magnitude lower than the first line 331.Similarly, at the third nanowire channel (Si₃) the dopant concentrationof the second line 332 is over an order of magnitude lower than thefirst line 331.

Referring now to FIG. 3B, a graph of the concentration of the dopant inthe various nanowire layers after the sacrificial layers are removed andthe gate dielectric and gate electrode are formed (which may include ananneal) is shown, in accordance with an embodiment. As shown, the graphis non-continuous since the sacrificial layers are replaced by the gatestack (which was not present during the dopant implantation). Theremaining nanowire channels exhibit the desired depopulation of thetransistor. For example, the first (topmost) nanowire channel (Si₁) hasconcentration of dopants that is approximately 1e20 cm³, and the nextnanowire channel (Si₂) has a concentration of dopants that is between1e16 cm⁻³ and 1e17 cm⁻³. That is the next nanowire channel (Si₂) has aconcentration of dopants that is approximately 3 orders of magnitudelower than the concentration of dopants in the first nanowire channel(Si₁). As such, the first nanowire channel (Si₁) is renderednon-conducting (i.e., depopulated), and the remaining nanowire channels(e.g., Si₂, Si₃, etc.) have a dopant concentration that is sufficientlylow so that the remaining nanowire channels still function normally.

In an embodiment, in order to engineer different devices havingdifferent drive-current strengths, a top-down depopulation process flowcan be implemented using lithography so that nanowire channels aredepopulated only from specific devices. In an embodiment, the entirewafer may be depopulated uniformly so all devices have same number ofnanowire channels. Examples of selective depopulation are shown in FIGS.4A-4C.

Referring now to FIG. 4A, a cross-sectional illustration depictingportions of a semiconductor device 450 is shown, in accordance with anembodiment. In an embodiment, the semiconductor device 450 may comprisea first transistor 400 _(A) and a second transistor 400 _(B). In anembodiment, individual ones of the first transistor 400 _(A) and thesecond transistor 400 _(B) may be disposed over a substrate 401 andcomprise a plurality of nanowire channels 415 surrounded by a gatedielectric 417 and a gate electrode 410.

In an embodiment, the first transistor 400 _(A) may comprise firstnanowire channels 415 _(A) and a second nanowire channel 415 _(B). Thefirst nanowire channels 415 _(A) are active channels and the secondnanowire channel 415 _(B) is a depopulated (i.e., non-active) channel.In the particular embodiment illustrated in FIG. 4A, there are threefirst nanowire channels 415 _(A) and a single second nanowire channel415 _(B). In an embodiment, the second transistor 400 _(B) may includeonly active first nanowire channels 415 _(A). In an embodiment, thetotal number of nanowire channels 415 in the first transistor 400 _(A)(e.g., four—three active first nanowire channels 415 _(A) and onedepopulated second nanowire channel 415 _(B)) is equal to the number ofnanowire channels 415 in the second transistor 400 _(B). Due to thelower number of active first nanowire channels 415 _(A), the drivecurrent of the first transistor 400 _(A) is lower than the drive currentof the second transistor 400 _(B).

Referring now to FIG. 4B, a cross-sectional illustration depictingportions of a semiconductor device 450 is shown, in accordance with anadditional embodiment. The semiconductor device 450 in FIG. 4B issubstantially similar to the semiconductor device 450 in FIG. 4A, withthe exception that the first transistor 400 _(A) comprises a pair ofdepopulated second nanowire channels 415 _(B). As such, an even greaterdifference is provided between the drive current of the first transistor400 _(A) and the drive current of the second transistor 400 _(B).

Referring now to FIG. 4C, a cross-sectional illustration depictingportions of a semiconductor device 450 is shown, in accordance with anadditional embodiment. The semiconductor device 450 in FIG. 4C issubstantially similar to the semiconductor device 450 in FIG. 4B, withthe exception that the second transistor 400 _(B) also comprises adepopulated second nanowire channel 415 _(B). Accordingly, the firsttransistor 400 _(A) and the second transistor 400 _(B) may havedifferent drive currents, as well as both transistors 400 _(A) and 400_(B) having a different drive current than a transistor (not shown)without any depopulated channels. This provides further flexibility indesigning circuitry of the semiconductor device 450.

In the embodiments disclosed above, a top-down depopulation scheme isdescribed. However, embodiments are not limited to such depopulationschemes. For example, embodiments disclosed herein may also utilize abottom-up depopulation scheme. In the bottom-up depopulation schemesdescribed herein, the depopulated nanowire channel is completely removedfrom the stack of nanowire channels. This is in contrast to the top-downapproach where the bulk structure of the depopulated nanowire channel ismaintained while only changing electrical conductivity of the nanowire.

Referring now to FIG. 5A, a cross-sectional illustration of a transistor500 formed with a bottom-up depopulation scheme is shown, in accordancewith an embodiment. In an embodiment, the transistor 500 may comprise asubstrate 501. Source/drain regions 505 may be separated from thesubstrate 501 by an insulator 502 and be positioned on either end of agate stack. The gate stack may cover the nanowire channels 515 thatconnect the source/drain regions 505 together. The gate stack maycomprise a gate dielectric 517 and a gate electrode 510. Spacers 511 mayseparate the gate electrode 510 from the source/drain regions 505.Suitable materials for the source/drain regions 505, the gate dielectric517, and the gate electrode 510 are similar to those described above.

As shown, the stack of nanowire channels 515 includes a depopulatedregion 514. The depopulated region 514 (indicated with dashed lines) isthe location where the bottommost semiconductor channel would otherwisebe located if it was not depopulated (i.e., removed). In an embodiment,the depopulated region 514 may comprise portions of the gate electrode510. Furthermore, the positioning and structure of the remainingnanowire channels 515 are not changed. That is, the spacings between theremaining nanowire channels 515 and the substrate 501 is not changed byremoving one or more of the nanowire channels 515.

Referring now to FIG. 5B, a cross-sectional illustration of a transistor500 formed with a bottom-up depopulation scheme is shown, in accordancewith an additional embodiment. The transistor 500 in FIG. 5B issubstantially similar to the transistor 500 in FIG. 5A, with theexception that an additional depopulated region 514 is provided. Thatis, two nanowire channels 515 have been depopulated (i.e., removed).While the depopulation of one and two nanowire channels 515 are shown inFIGS. 5A and 5B, respectively, it is to be appreciated that any numberof nanowire channels 515 may be depopulated in order to provide adesired drive current to the transistor, in accordance with anembodiment.

Referring now to FIGS. 6A-6D, a series of cross-sectional illustrationsdepicting a process for implementing a bottom-up depopulation scheme isprovided, in accordance with an embodiment. For each of the FIGS. 6A,6B, 6C and 6D, a gate cut cross-sectional view (left-hand side), a fincut on source or drain (S/D) cross-sectional view (middle), and a fincut on gate cross-sectional view (right-hand side), are illustrated.

Referring to FIG. 6A, a starting stack includes a fin of alternatingsilicon germanium layers 618 and silicon layers 615 above a substrate601, which may be or include a silicon fin. In the case that substrate601 includes or is a silicon fin, an upper fin portion 606 may be abovea lower fin portion 604, as delineated by the height of a shallow trenchisolation structure (not depicted). The silicon layers 615 may bereferred to as a vertical arrangement of silicon nanowires. Thebottommost silicon germanium layer 618 may be thicker than upper silicongermanium layers 618, as is depicted.

Referring again to FIG. 6A, a dielectric liner 613, such as a dummy gateoxide liner composed of silicon oxide, is over the fin of alternatingsilicon germanium layers 618 and silicon layers 615. A protective caplayer 616, such as a silicon nitride or titanium nitride cap layer, maybe formed on the dielectric liner 613. It is to be appreciated that forclarity, the dielectric liner 613 and the protective cap layer 616 arenot depicted in the gate cut image (left), but would be present over thestructure. Gate stacks 612, such as sacrificial or dummy gate stackscomposed of polysilicon or a silicon nitride pillar, are formed over thedielectric liner 613 and the protective cap layer 616 over thealternating silicon germanium layers 618 and silicon layers 615.Although the preceding describes using Si and SiGe layers, other pairsof semiconductor materials which can be alloyed and grown epitaxiallycould be implemented to achieve various embodiments herein, for example,InAs and InGaAs, or SiGe and Ge.

Referring to FIG. 6B, a masking stack is formed over the structure ofFIG. 6A not covered by gate stacks 612. In an embodiment, the maskingstack includes a lower layer 641 and an upper layer 640. In oneembodiment, the lower layer 641 is a carbon-based hardmask layer whichis deposited and then recessed to a desired level. For example, thelevel may be approximately aligned with the bottommost silicon germaniumlayer 618, as is depicted. In one embodiment, upper layer 640 iscomposed of a metal-based hardmask, such as a titanium nitride layer.The upper layer 640 is recessed to expose the protective cap layer 616.

Referring to FIG. 6C, the lower layer 641 of the masking stack of thestructure of FIG. 6B is removed, e.g., by a selective wet etch process.Additionally, the lower portions of the dielectric liner 613 and theprotective cap layer 616 exposed upon removing the lower layer 641 ofthe masking stack are removed, e.g., by further selective etchprocesses. Removal of the lower layer 641 and the lower portions of thedielectric liner 613 and the protective cap layer 616 exposes at least aportion of the bottommost silicon germanium layer 618.

Referring to FIG. 6D, the bottommost silicon germanium layer 618 isremoved. The bottommost silicon germanium layer 618 may be removed by aselective etch process 622 that etches silicon germanium selective tosilicon. Following removal of the bottommost silicon germanium layer618, the bottommost silicon layer 615 is then removed. The bottommostsilicon layer 615 may be removed by a selective etch process 624 thatetches silicon selective to silicon germanium. The result is effectiveremoval (or depopulation) of a bottommost silicon nanowire. It is to beappreciated that the etch 624 used to remove the bottommost siliconlayer 615 may remove a portion 628 of the substrate of fin 601 to leavea partially etched fin or substrate 601A, as is depicted. Also, in anembodiment, the above process may be repeated to remove the nextbottommost wire, and so on, until desired depopulation is achieved.

In an embodiment, the silicon germanium layer is etched selectively witha wet etch that selectively removes the silicon germanium while notetching the silicon layers. Etch chemistries such as carboxylicacid/nitric acid/HF chemistry, and citric acid/nitric acid/HF, forexample, may be utilized to selectively etch the silicon germanium. Inan embodiment, silicon layers are etched selectively with a wet etchthat selectively removes the silicon while not etching the silicongermanium layers. Etch chemistries such as aqueous hydroxidechemistries, including ammonium hydroxide and potassium hydroxide, forexample, may be utilized to selectively etch the silicon. Halide-baseddry etches or plasma-enhanced vapor etches may also be used to achievethe embodiments herein.

It is to be appreciated that following the processing described inassociation with FIG. 6D, an insulating or dielectric material (shown inFIG. 5A and FIG. 5B as insulator 502) may be formed in the location 626where channel depopulation is performed. Also, a permanent gatedielectric and a permanent gate electrode may be formed upon removal ofgate structures 612.

In an embodiment, in order to engineer different devices havingdifferent drive-current strengths, a bottom-up depopulation process flowcan be patterned with lithography so that nanowire channels aredepopulated only from specific devices. In an embodiment, the entirewafer may be depopulated uniformly so all devices have same number ofnanowire channels. Examples of selective depopulation are provide inFIGS. 7A-7C.

Referring now to FIG. 7A, a cross-sectional illustration depictingportions of a semiconductor device 750 is shown, in accordance with anembodiment. In an embodiment, the semiconductor device 750 may comprisea first transistor 700 _(A) and a second transistor 700 _(B). In anembodiment, individual ones of the first transistor 700 _(A) and thesecond transistor 700 _(B) may be disposed over a substrate 701 andcomprise a plurality of nanowire channels 715 surrounded by a gatedielectric 717 and a gate electrode 710.

In an embodiment, the first transistor 700 _(A) may comprise threenanowire channels 715, and the second transistor 700 _(B) may comprisefour nanowire channels 715. Having fewer nanowire channels 715 resultsin the first transistor 700 _(A) having a lower drive current thansecond transistor 700 _(B). In the first transistor 700 _(A) adepopulated region 714 is positioned below the three nanowire channels715. The depopulated region 714 is aligned in the Z-direction with thebottommost nanowire channel 715 of the second transistor 700 _(B). Theremaining nanowire channels 715 of the first transistor 700 _(A) areeach aligned (in the Z-direction) with one of the nanowire channels 715of the second transistor 700 _(B). For example, the topmost nanowirechannel 715 in the first transistor 700 _(A) is aligned with the topmostnanowire channel 715 in the second transistor 700 _(B).

Referring now to FIG. 7B, a cross-sectional illustration depictingportions of a semiconductor device 750 is shown, in accordance with anadditional embodiment. The semiconductor device 750 in FIG. 7B issubstantially similar to the semiconductor device 750 in FIG. 7A, withthe exception that the first transistor 700 _(A) comprises a pair ofdepopulated regions 714. As such, an even greater difference is providedbetween the drive current of the first transistor 700 _(A) and the drivecurrent of the second transistor 700 _(B).

Referring now to FIG. 7C, a cross-sectional illustration depictingportions of a semiconductor device 750 is shown, in accordance with anadditional embodiment. The semiconductor device 750 in FIG. 7C issubstantially similar to the semiconductor device 750 in FIG. 7B, withthe exception that the second transistor 700 _(B) also comprises adepopulated region 714. Accordingly, the first transistor 700 _(A) andthe second transistor 700 _(B) may have different drive currents, aswell as both transistors 700 _(A) and 700 _(B) having a different drivecurrent than a transistor (not shown) without any depopulated regions.This provides further flexibility in designing circuitry of thesemiconductor device 750.

In the embodiments described above the depopulation architectures weredescribed as including either top-down or bottom-up process flows.However, it is to be appreciated that in some embodiments a combinationof both process flow may be provided. Examples of such semiconductordevice 750 are provided in FIGS. 7D and 7E.

Referring now to FIG. 7D, a cross-sectional illustration of asemiconductor device 750 is shown, in accordance with an embodiment. Inan embodiment, the semiconductor device 750 comprises a first transistor700 _(A) and a second transistor 700 _(B). The second transistor 700_(B) comprises only active first nanowire channels 715 _(A). The firsttransistor 700 _(A) may comprise active first nanowire channels 715_(A), a depopulated second nanowire channel 715 _(B), and a depopulatedregion 714. For example, the depopulated second nanowire channel 715_(B) may be doped with a depopulation dopant (e.g., using a top-downprocess flow), and the depopulated region 714 may be formed using abottom-up process flow.

Referring now to FIG. 7E, a cross-sectional illustration of asemiconductor device 750 is shown, in accordance with an additionalembodiment. In an embodiment, the first transistor 700 _(A) may compriseone or more depopulated second nanowire channels 715 _(B), and thesecond transistor 700 _(A) may comprise one or more depopulated regions714. That is, within a single device, individual transistors 700 may bedepopulated using either a top-down process flow or a bottom-up processflow.

The ability to provide modulated drive current between differenttransistors within a single device allows for improved flexibility incircuit design. Additionally, assist circuitry may not be needed inorder to accommodate uniform drive currents between transistors. Theability to modulate drive current is particularly beneficial in thedesign of SRAM cells. An example of such a 6-T SRAM cell 870 is shown inFIG. 8. As shown, a plurality of fins 871 and gate electrodes 810 areinterconnected to form the 6-T SRAM cell 870.

In an embodiment, the cell 870 comprises a pair of PMOS pull-uptransistors (PU₁ and PU₂), a pair of NMOS pass-gate transistors (PG₁ andPG₂), and a pair of NMOS pull-down transistors (PD₁ and PD₂). In atypical architecture (i.e., where all transistors have the same numberof nanowire channels), the read stability and write-ability isunbalanced, and assist circuitry (not shown) is needed. However, inembodiments disclosed herein, the PU₁ and PU₂ transistors may bedepopulated in order to reduce the drive strength of the PU transistorscompared to that of the PD and PG transistors. As such, better balancebetween the read stability and write-ability is provided. Thiseliminates the need for assist circuits, and therefore, saves thecorresponding chip area and power consumption.

Referring now to FIGS. 9A and 9B, cross-sectional illustrations of thecell 870 along lines A-A′ and B-B′ are shown, respectively, inaccordance with an embodiment that utilizes a top-down depopulationscheme. As shown, the PG₁, PG₂, PD₁, and PD₂ transistors each have fouractive first nanowire channels 915 _(A). The PU₁ and PU₂ transistorseach have a depopulated second nanowire channel 915 _(B) and threeactive first nanowire channels 915 _(A) below the second nanowirechannel 915 _(B). The depopulated second nanowire channels 915 _(B) maybe implemented using processes described above. For example, the secondnanowire channels 915 _(B) may comprise a depopulation dopant with aconcentration of approximately 1e19 cm⁻³ or greater, or approximately1e20 cm⁻³ or greater.

Referring now to FIGS. 10A and 10B, cross-sectional illustrations of thecell 870 along lines A-A′ and B-B′ are shown, respectively, inaccordance with an embodiment that utilizes a bottom-up depopulationscheme. As shown, the PG₁, PG₂, PD₁, and PD₂ transistors each have fouractive nanowire channels 1015. The PU₁ and PU₂ transistors each have adepopulated region 1014 and three nanowire channels 1015 above thedepopulated region 1014. The depopulated region 1014 is substantiallyaligned with the bottommost nanowire channels 1015 of the othertransistors.

FIG. 11 illustrates a computing device 1100 in accordance with oneimplementation of an embodiment of the disclosure. The computing device1100 houses a board 1102. The board 1102 may include a number ofcomponents, including but not limited to a processor 1104 and at leastone communication chip 1106. The processor 1104 is physically andelectrically coupled to the board 1102. In some implementations the atleast one communication chip 1106 is also physically and electricallycoupled to the board 1102. In further implementations, the communicationchip 1106 is part of the processor 1104.

Depending on its applications, computing device 1100 may include othercomponents that may or may not be physically and electrically coupled tothe board 1102. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 1106 enables wireless communications for thetransfer of data to and from the computing device 1100. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 1106 may implementany of a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 1100 may include a plurality ofcommunication chips 1106. For instance, a first communication chip 1106may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 1106 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 1104 of the computing device 1100 includes an integratedcircuit die packaged within the processor 1104. In an embodiment, theintegrated circuit die of the processor 1104 may comprise nanowire ornanoribbon transistors with one or more depopulated channels, such asthose described herein. The term “processor” may refer to any device orportion of a device that processes electronic data from registers and/ormemory to transform that electronic data into other electronic data thatmay be stored in registers and/or memory.

The communication chip 1106 also includes an integrated circuit diepackaged within the communication chip 1106. In an embodiment, theintegrated circuit die of the communication chip 1106 may comprisenanowire or nanoribbon transistors with one or more depopulatedchannels, such as those described herein.

In further implementations, another component housed within thecomputing device 1100 may comprise nanowire or nanoribbon transistorswith one or more depopulated channels, such as those described herein.

In various implementations, the computing device 1100 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 1100 may be any other electronic device that processes data.

FIG. 12 illustrates an interposer 1200 that includes one or moreembodiments of the disclosure. The interposer 1200 is an interveningsubstrate used to bridge a first substrate 1202 to a second substrate1204. The first substrate 1202 may be, for instance, an integratedcircuit die. The second substrate 1204 may be, for instance, a memorymodule, a computer motherboard, or another integrated circuit die. In anembodiment, one of both of the first substrate 1202 and the secondsubstrate 1204 may comprise nanowire or nanoribbon transistors with oneor more depopulated channels, in accordance with embodiments describedherein. Generally, the purpose of an interposer 1200 is to spread aconnection to a wider pitch or to reroute a connection to a differentconnection. For example, an interposer 1200 may couple an integratedcircuit die to a ball grid array (BGA) 1206 that can subsequently becoupled to the second substrate 1204. In some embodiments, the first andsecond substrates 1202/1204 are attached to opposing sides of theinterposer 1200. In other embodiments, the first and second substrates1202/1204 are attached to the same side of the interposer 1200. And infurther embodiments, three or more substrates are interconnected by wayof the interposer 1200.

The interposer 1200 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposer1200 may be formed of alternate rigid or flexible materials that mayinclude the same materials described above for use in a semiconductorsubstrate, such as silicon, germanium, and other group III-V and groupIV materials

The interposer 1200 may include metal interconnects 1208 and vias 1210,including but not limited to through-silicon vias (TSVs) 1212. Theinterposer 1200 may further include embedded devices 1214, includingboth passive and active devices. Such devices include, but are notlimited to, capacitors, decoupling capacitors, resistors, inductors,fuses, diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 1200. Inaccordance with embodiments of the disclosure, apparatuses or processesdisclosed herein may be used in the fabrication of interposer 1200.

Thus, embodiments of the present disclosure may comprise nanowire ornanoribbon transistors with one or more depopulated channels, and theresulting structures.

The above description of illustrated implementations of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific implementations of, and examples for, the invention aredescribed herein for illustrative purposes, various equivalentmodifications are possible within the scope of the invention, as thoseskilled in the relevant art will recognize.

These modifications may be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of theinvention is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Example 1: a transistor device, comprising: a source region; a drainregion; and a vertical stack of semiconductor channels between thesource region and the drain region, wherein the vertical stack ofsemiconductor channels comprises: first semiconductor channels; and asecond semiconductor channel over the first semiconductor channels,wherein first concentrations of a dopant in the first semiconductorchannels are less than a second concentration of the dopant in thesecond semiconductor channel.

Example 2: the transistor device of Example 1, wherein the secondconcentration of the dopant is approximately 1e19 cm⁻³ or greater.

Example 3: the transistor device of Example 2, wherein the firstconcentrations of the dopant are at least three orders of magnitudelower than the second concentration of the dopant.

Example 4: the transistor device of Examples 1-3, wherein the transistordevice is a P-type device, and wherein the dopant is an N-type dopant.

Example 5: the transistor device of Example 4, wherein the dopant isphosphorus or arsenic.

Example 6: the transistor device of Examples 1-3, wherein the transistordevice is an N-type device, and wherein the dopant is a P-type dopant.

Example 7: the transistor device of Example 6, wherein the dopant isboron or gallium.

Example 8: the transistor device of Examples 1-7, wherein the secondsemiconductor channel further comprises a pre-amorphization dopant.

Example 9: the transistor device of Example 8, wherein thepre-amorphization dopant is germanium.

Example 10: the transistor device of Examples 1-9, wherein the firstsemiconductor channels have a first degree of crystallinity that ishigher than a second degree of crystallinity of the second semiconductorchannel.

Example 11: the transistor device of Examples 1-10, wherein the verticalstack of semiconductor channels further comprises a third semiconductorchannel between the first semiconductor channels and the secondsemiconductor channel, wherein a third concentration of the dopant inthe third semiconductor channel is greater than the first concentrationsof the dopant in the first semiconductor channels.

Example 12: the transistor device of Examples 1-11, wherein the firstsemiconductor channels and the second semiconductor channel arenanoribbons or nanowires.

Example 13: an integrated circuit structure, comprising: a firsttransistor, wherein the first transistor comprises: a first stack ofsemiconductor channels, wherein a first number of active channels are inthe first stack; and s second transistor, wherein the second transistorcomprises: a second stack of semiconductor channels, wherein a secondnumber of active channels in the second stack is smaller than the firstnumber of active channels.

Example 14: the integrated circuit structure of Example 13, wherein thesecond stack comprises: a plurality of active channels; and adepopulated channel, wherein the depopulated channel comprises aconcentration of dopants that inactivates the depopulated channel.

Example 15: the integrated circuit structure of Example 14, wherein atotal number of channels in the second stack is equal to the firstnumber of active channels in the first stack.

Example 16: the integrated circuit structure of Example 14, wherein thedepopulated channel comprises a dopant concentration of approximately1e19 cm⁻³ or greater of a dopant of a first conductivity type that isopposite of a second conductivity type of the second transistor.

Example 17: the integrated circuit structure of Examples 14-16, whereinthe depopulated channel is above the plurality of active channels.

Example 18: the integrated circuit structure of Examples 13-17, whereina topmost active channel of the second transistor is aligned with atopmost active channel of the first transistor, and wherein adepopulated region of the second transistor is adjacent to a bottommostactive channel of the first transistor.

Example 19: the integrated circuit structure of Examples 13-18, whereinthe first transistor and the second transistor are nanoribbon ornanowire transistors.

Example 20: a static random-access memory (SRAM) cell, comprising: apair of pass-gate (PG) transistors, wherein individual ones of the PGtransistors comprise a first stack of semiconductor channels; a pair ofpull-up (PU) transistors, wherein individual ones of the PU transistorscomprise a second stack of semiconductor channels; and a pair ofpull-down (PD) transistors, wherein individual ones of the PDtransistors comprise a third stack of semiconductor channels, andwherein a number of active channels in the second stack is smaller thana number of active channels in the first stack or the third stack.

Example 21: the SRAM cell of Example 20, wherein the second stackcomprises a plurality of active channels and a depopulated channel,wherein the depopulated channel comprises a dopant concentration ofapproximately 1e19 cm⁻³ or greater of a dopant of a first conductivitytype that is opposite of a second conductivity type of the PUtransistors.

Example 22: the SRAM cell of Example 20 or Example 21, wherein a topmostactive channel in the second stack is aligned with topmost activechannels in the first stack and the third stack, and wherein bottommostactive channels in the first stack and the third stack are aligned witha depopulated region in the second stack.

Example 23: an electronic device, comprising: a board; an electronicpackage coupled to the board; and a die electrically coupled to theelectronic package, wherein the die comprises: a first transistor,wherein the first transistor comprises: a first stack of semiconductorchannels, wherein a first number of active channels are in the firststack; and a second transistor, wherein the second transistor comprises:a second stack of semiconductor channels, wherein a second number ofactive channels in the second stack is smaller than the first number ofactive channels.

Example 24: the electronic device of Example 23, wherein the secondstack comprises: a plurality of active channels; and a depopulatedchannel, wherein the depopulated channel comprises a concentration ofdopants that inactivates the depopulated channel, and wherein a totalnumber of channels in the second stack is equal to the first number ofactive channels in the first stack.

Example 25: the electronic device of Example 23 or Example 24, wherein atopmost active channel of the second transistor is aligned with atopmost active channel of the first transistor, and wherein adepopulated region of the second transistor is adjacent to a bottommostactive channel of the first transistor.

What is claimed is:
 1. A transistor device, comprising: a source region;a drain region; and a vertical stack of semiconductor channels betweenthe source region and the drain region, wherein the vertical stack ofsemiconductor channels comprises: first semiconductor channels, whereinthe first semiconductor channels are active channels; and a secondsemiconductor channel over the first semiconductor channels, whereinfirst concentrations of a dopant in the first semiconductor channels areless than a second concentration of the dopant in the secondsemiconductor channel, wherein the second semiconductor channel is aninactive channel.
 2. The transistor device of claim 1, wherein thesecond concentration of the dopant is approximately 1e19 cm⁻³ orgreater.
 3. The transistor device of claim 2, wherein the firstconcentrations of the dopant are at least three orders of magnitudelower than the second concentration of the dopant.
 4. The transistordevice of claim 1, wherein the transistor device is a P-type device, andwherein the dopant is an N-type dopant.
 5. The transistor device ofclaim 4, wherein the dopant is phosphorus or arsenic.
 6. The transistordevice of claim 1, wherein the transistor device is an N-type device,and wherein the dopant is a P-type dopant.
 7. The transistor device ofclaim 6, wherein the dopant is boron or gallium.
 8. The transistordevice of claim 1, wherein the second semiconductor channel furthercomprises a pre-amorphization dopant.
 9. The transistor device of claim8, wherein the pre-amorphization dopant is germanium.
 10. The transistordevice of claim 1, wherein the first semiconductor channels have a firstdegree of crystallinity that is higher than a second degree ofcrystallinity of the second semiconductor channel.
 11. The transistordevice of claim 1, wherein the vertical stack of semiconductor channelsfurther comprises a third semiconductor channel between the firstsemiconductor channels and the second semiconductor channel, wherein athird concentration of the dopant in the third semiconductor channel isgreater than the first concentrations of the dopant in the firstsemiconductor channels.
 12. The transistor device of claim 1, whereinthe first semiconductor channels and the second semiconductor channelare nanoribbons or nanowires.
 13. A transistor device, comprising: asource region; a drain region; and a vertical stack of semiconductorchannels between the source region and the drain region, wherein thevertical stack of semiconductor channels comprises: first semiconductorchannels; and a second semiconductor channel over the firstsemiconductor channels, wherein first concentrations of a dopant in thefirst semiconductor channels are less than a second concentration of thedopant in the second semiconductor channel, wherein the firstsemiconductor channels have a first degree of crystallinity that ishigher than a second degree of crystallinity of the second semiconductorchannel.
 14. A computing device, comprising: a board; and a componentcoupled to the board, the component including an integrated circuitstructure, comprising: a source region; a drain region; and a verticalstack of semiconductor channels between the source region and the drainregion, wherein the vertical stack of semiconductor channels comprises:first semiconductor channels, wherein the first semiconductor channelsare active channels; and a second semiconductor channel over the firstsemiconductor channels, wherein first concentrations of a dopant in thefirst semiconductor channels are less than a second concentration of thedopant in the second semiconductor channel, wherein the secondsemiconductor channels are inactive channels.
 15. The computing deviceof claim 14, further comprising: a memory coupled to the board.
 16. Thecomputing device of claim 14, further comprising: a communication chipcoupled to the board.
 17. The computing device of claim 14, furthercomprising: a battery coupled to the board.
 18. The computing device ofclaim 14, wherein the component is a packaged integrated circuit die.